We report a 3-D-stackable 1S1R passive cross-point resistive random access memory (RRAM). The sneak (leakage) current challenge in the cross-point RRAM integration has been overcome utilizing a field-assisted superlinear threshold selector. The selector offers high selectivity of >10 7 , sharp switching slope of <5 mV/decade, ability to tune the threshold voltage, stable operation at 125°C, and endurance of >10 11 . Furthermore, we demonstrate 1S1R integration in which the selectorsubthreshold current is <10 pA while offering >10 2 memory ON/ OFF ratio and >10 6 selectivity during cycling. Combined with self-current-controlled RRAM, the 1S1R enables high-density and high-performance memory applications.Index Terms-1S1R, cross-point memory, resistive random access memory (RRAM), select device, selectivity, sneak path.

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