Analytical modeling of a Vertical Cavity Surface Emitting Laser (VCSEL) based on GaAs/AlGaAs material system has been presented in this paper. The VCSEL is expected to emit the laser radiation at 0.85 µm wavelength which may be useful for free-space-optical communication (FSOC) through the available atmospheric window. The different properties of the VCSEL have been simulated analytically. The studies thus developed will provide useful design guidelines for the experimentalists for optimizing their device prototypes.

The numerical simulation of a double heterostructures (DH) laser diode based on n + -InAs0.61Sb0.13P0.26/ n + -InAs0.97Sb0.03/p + -InAs0.61Sb0.13P0.26 material system has been carried out in this paper. The proposed structure is suitable for use as a source for free space optical communication system at 3.7 μm at room temperature. The laser has been characterized in terms of several laser parameters like energy band diagram and doping profile. The current-voltage characteristics of structure have been estimated taking into account the degeneracy effect. The output power of the laser has been estimated by solving the applicable Helmholtz equation for the trial structure. The outcomes of the numerical simulation have been validated by the reported experimental results.

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