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InAs/GaSb superlattice (SL) structures were fabricated on GaSb substrates by metalorganic vapor phase epitaxy (MOVPE) toward midwavelength infrared (MWIR) photodiodes. Almost defect‐free 200‐period SLs with a strain‐compensation interfacial layer were successfully fabricated and demonstrate an intense photoluminescence peak centered at 6.1 µm at 4 K and an external quantum efficiency of 31% at 3.5 µm at 20 K. These results indicate that the high‐performance MWIR detectors can be fabricated in application with the InAs/GaSb SLs grown by MOVPE as an attractive method for production.

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