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AgInSbTe (AIST)-SiO 2 nanocomposite thin films were successfully prepared by sputtering deposition utilizing an AIST-SiO 2 composite target and their phase-transition behaviors were investigated. Transmission electron microscopy (TEM) revealed that the as-deposited composite layer contained nano-scale quaternary alloy particles about 5 nm in size randomly embedded in the SiO 2 matrix. In situ reflectivity-temperature measurements showed that the AIST-SiO 2 nanocomposite and pristine AIST layers exhibit similar abrupt reflectivity changes at about 200 C. However, the presence of the SiO 2 phase hindered particle growth in the nanocomposite layers which, in turn, caused a mild increase in the phase-transition temperatures. Johnson-Mehl-Avrami (JMA) analysis indicated that, regardless of the film thickness, the amorphous-tocrystalline transition in nanocomposite layers proceeds in a bulk-like manner. Dynamic tests revealed that modulations higher than 0.8, 0.6, and 0.5 were achieved when 11T, 4T, and 3T signals, respectively were, written in the one-layer AIST-SiO 2 disk sample. The unique phase transition behavior of nanocomposite layers and signal property analysis of disk samples demonstrated that a nanocomposite layer can be a new alternative for write-once optical data storage.