even higher strain-stress field is likely created within the perovskite lattices than in the case of rigid substrates because of the larger thermal expansion mismatch with the flexible polymer substrates and the operations that induce intense stress, such as bending, stretching, twisting, and folding. [8][9][10] On the other hand, the additional strain present in the flexible perovskite structure can positively influence the piezoelectric properties of the materials, if properly applied, by inducing the extensive distortion of octahedral structure and thus the surface polarization.Herein, we propose a strain-engineering technique that enables intentionally imposing in situ compressive or tensile strain. As a representative all-inorganic halide material, we employed CsPbBr 3 in the form of a flexible thin film to explore its strain-dependent piezoelectricity for use in harvesting electromechanical energy under bending operation. Despite the variety of potential anisotropic halide compounds, piezoelectricity in perovskite halides has rarely been demonstrated experimentally, probably because of the difficulty of securing high-quality samples due to the limited availability of appropriate chemical precursors and synthesis methods. Table S1 (Supporting Information) summarizes the reported piezoelectric coefficients of halide materials, [11][12][13][14][15][16][17][18][19][20][21] which were obtained from both experiments and theoretical simulations. Apart from the reported theoretical estimations of piezoelectricity, [11,12] the local piezoresponse as characterized by piezoresponse force microscopy (PFM) is usually used to define the effective piezoelectric coefficient d 33,eff for synthesized halide materials. [13][14][15][19][20][21] For example, a d 33,eff value of 6 pm V −1 was reported for methylammonium lead iodide (MAPbI 3 ) thin films as a result of PFM measurements. [14] As another example, MASnI 3 thin films revealed a high d 33,eff of 20.8 pm V −1 with a well-developed butterfly loop. [15] Typically, the experimental piezoelectric coefficient ranged from 0.32 to 38 pm V −1 , [13][14][15][16][17][18][19][20][21] while the theoretical values were in the range of 4.1 to 31.4 pC N −1 , [11,12] which depended on halide composition (e.g., organic-inorganic versus inorganic compounds and B-site substitutions in ABX 3 structure) and the type of material (e.g., single-crystal, nanoparticle, and thin film) as summarized in Table S1 (Supporting Information).The enhanced piezoelectricity achieved by applying the in situ strain here was further verified by demonstrating the