Strain perturbs atomic ordering in solids, with far-reaching consequences from an increased carrier mobility to localization in Si, stabilization of electric dipoles and nanomechanical transistor action in oxides, to the manipulation of spins without applying magnetic fields in n-GaAs. In GaMnAs, a carrier-mediated ferromagnetic semiconductor, relativistic spin-orbit interactions – highly strain-dependent magnetic interactions – play a crucial role in determining the magnetic anisotropy (MA) and anisotropic magnetoresistance (AMR). Strain modifies the MA and AMR in a nanomachined GaMnAs structure as measured by the anomalous Hall effect (AHE) and the planar Hall effect (PHE). Here, we report an MA modification by strain relaxation in an isolated GaMnAs Hall bar structure and by applying a range of local strains via fabricating asymmetrically mechanically buckled GaMnAs micro-Hall bar structures. In the AHE and PHE measurements, we observe a reduction in the in-plane MA and an enhancement in the out-of-plane MA as the compressive strain due to the lattice mismatch relaxes in the suspended structure. The functionality of such mechanical manipulation, as well as the two-level mechanical state and the corresponding AHE responses, is demonstrated by a fully scalable binary mechanical memory element in a GaMnAs single Hall cross structure.

Single-electron sources, formed by a quantum dot (QD), are key elements for realizing electron analogue of quantum optics. We develop a new type of single-electron source with functionalities that are absent in existing sources. This source couples with only one lead. By an AC rf drive, it successively emits holes and electrons cotraveling in the lead, as in the mesoscopic capacitor. Thanks to the considerable charging energy of the QD, however, emitted electrons have energy levels a few tens of millielectronvolts above the Fermi level, so that emitted holes and electrons are split by a potential barrier on demand, resulting in a rectified quantized current. The resulting pump map exhibits quantized triangular islands, in good agreement with our theory. We also demonstrate that the source can be operated with another tunable-barrier single-electron source in a series double QD geometry, showing parallel electron pumping by a common gate driving.

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