Transition metal dichalcogenide-based quantum dots are promising materials for applications in diverse fields, such as sensors, electronics, catalysis, and biomedicine, because of their outstanding physicochemical properties. In this study, we propose bio-imaging characteristics through utilizing water-soluble MoS2 quantum dots (MoS2-QDs) with two different sizes (i.e., ~5 and ~10 nm). The structural and optical properties of the fabricated metallic phase MoS2-QDs (m-MoS2-QDs) were characterized by transmission electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, UV–vis absorption spectroscopy, and photoluminescence. The synthesized m-MoS2-QDs showed clear photophysical characteristic peaks derived from the quantum confinement effect and defect sites, such as oxygen functional groups. When the diameter of the synthesized m-MoS2-QD was decreased, the emission peak was blue-shifted from 436 to 486 nm under excitation by a He-Cd laser (325 nm). Density functional theory calculations confirmed that the size decrease of m-MoS2-QDs led to an increase in the bandgap because of quantum confinement effects. In addition, when incorporated into the bio-imaging of HeLa cells, m-MoS2-QDs were quite biocompatible with bright luminescence and exhibited low toxicity. Our results are commercially applicable for achieving high-performance bio-imaging probes.

Interest in wearable electronics has led to extensive studies on woven textiles that are mechanically robust and stretchable, have high electrical conductivities, and exhibit fire resistance properties even at high temperatures. We demonstrate a highly easy and scalable method for fabricating defect-free graphene (dfG) nacre-based woven electronic textiles (e-textiles) with enhanced flame-retardant properties and high electronic conductivities. The as-prepared graphene shows perfect preservation of its inherent properties without any crystal damage during subsequent exfoliation and noncovalent melamine functionalization. The defect-free graphene functionalized by melamine (m-dfG) is well dispersed in various polar solvents. To investigate the synergistic effect of m-dfG, quaternary artificial nacre composites are fabricated by adding manganese­(II) chloride to a m-dfG/polymer (carboxymethyl cellulose (CMC)) composite. Their mechanical, electrical, and thermal characteristics are then evaluated. The quaternary m-dfG-Mn2+-CMC artificial nacre exhibits exceptionally enhanced mechanical properties (tensile strength: 613.9 MPa; toughness: 7.13 MJ m–3) and the best flame retardancy (even at torch heating) as compared to those of graphene oxide/reduced graphene oxide (GO/rGO)-based nacres. In this context, our approach will be helpful to future wearable electronics and fire-retardant textiles with high strength, which can accelerate the commercial viability of e-textiles.

The design of photoactive materials and interface engineering between organic/inorganic layers play a critical role in achieving enhanced performance in energy-harvesting devices. Two-dimensional transitional dichalcogenides (TMDs) with excellent optical and electronic properties are promising candidates in this regard. In this study, we demonstrate the fabrication of size-controlled MoS2 quantum dots (QDs) and present fundamental studies of their optical properties and their application as a hole-transport layer (HTL) in organic solar cells (OSCs). Optical and structural analyses reveal that the as-prepared MoS2 QDs show a fluorescence mechanism with respect to the quantum confinement effect and intrinsic/extrinsic states. Moreover, when incorporated into a photovoltaic device, the MoS2 QDs exhibit a significantly enhanced performance (5/10-nanometer QDs: 8.30%/7.80% for PTB7 and 10.40%/10.17% for PTB7-Th, respectively) compared to those of the reference device (7.24% for PTB7 and 9.49% for PTB7-Th). We confirm that the MoS2 QDs clearly offer enhanced transport characteristics ascribed to higher hole-mobility and smoother root mean square (Rq) as a hole-extraction material. This approach can enable significant advances and facilitate a new avenue for realizing high-performance optoelectronic devices.