In this study, ITO/ZnO nanorod electrodes were used to enhance the light extraction efficiency (LEE) of InGaN-based LEDs. The ZnO nanorods were grown on ITO using a simple non-catalytic polymer-template wet-chemical growth method at a temperature of 90 ºC. In 0.14 Ga 0.86 N/GaN-based LEDs ( = 453 nm) were fabricated with well-aligned ZnO nanorods (WAZNR), not-aligned ZnO nanorods (NAZNR), and bare-ITO electrodes (reference), and their electrical and optical properties were characterized. LEDs with WAZNR showed 39.9% and 25.4% higher electroluminescence intensity than those with bare-ITO and NAZNR, respectively. The LED fabricated with WAZNR exhibited 44.4% and 30.2% higher light output power at 100 mA, respectively, than those with ITO-only and NAZNR. Furthermore, the external quantum efficiency (EQE) at 100 mA of the LED with WAZNR was 37.1% and 43.1% higher than those of the LEDs with bare-ITO and NAZNR, respectively.

Formation of low-resistance ohmic contacts to p-GaP is important for development of high-efficiency AlGaInP light-emitting diodes (LEDs), which emit light from red to yellow-green and have a wide variety of applications such as traffic light lamps, automobile tail lamps, and in biotherapy. The current flow behavior can be understood by investigating the effect of the Schottky barrier height (SBH; U B ) on the work function of metals (U M ). In this work, SBHs and their dependence on U M at (001) p-GaP surfaces were investigated. With increasing temperature, the SBH increased, while the ideality factor decreased. This behavior is explained by means of a thermionic field-emission (TFE) model. The SBH and ideal factor ranged from 0.805 eV to 0.852 eV and from 1.18 to 1.50, respectively, for different Schottky metals. The S-parameter (dU B /dU M ) was estimated to be 0.025, with this approximately zero value implying that the surface Fermi level is virtually perfectly pinned at the surface states at $0.85 eV above the valence-band edge.