Aromatic soluble polyimides (PIs) have been widely used in organic field-effect transistors (OFETs) as gate dielectric layers due to their promising features such as outstanding chemical resistance, thermal stability, low-temperature processability, and mechanical flexibility. However, the molecular structures of soluble PIs on the electrical characteristics of OFETs are not yet fully understood. In this work, the material, dielectric, and electrical properties are evaluated to systematically investigate the chemical structure effect of aromatic dianhydride and diamine monomers on the device performance. Four soluble PIs based on 4,4'-(Hexafluoroisopropylidene)­diphthalic anhydride (6FDA) and 5-(2,5-Dioxotetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, in which the monomeric precursors contain different backbones, side groups, and linkages, were employed to compare the chemical structure impact. The dielectric properties, which significantly affect the charge transport and crystallinity of OSC thin films, clearly depended on the soluble PI types as well as the surface energy and the thermal stability. Furthermore, the electrical characteristic measurement and parameter extraction of OFETs based on TIPS-pentacene revealed that the 6FDA-based soluble PIs, which lead to high field-effect mobility, near-zero threshold electric field, and outstanding electrical stability under bias stress, are the most promising gate dielectric candidates. Finally, low-temperature solution-processed OFETs are successfully integrated with ultrathin flexible substrates, and they exhibit no significant electrical performance loss after mechanical flexibility tests. This work presents a step forward in the development of soluble PI gate dielectrics for flexible electronic devices with high device performance.

Metal-organic frameworks with high aspect ratios have the potential to yield high-performance gas separation membranes. We demonstrate the scalable synthesis of high-aspect ratio zeolitic imidazolate framework (ZIF)-8 nanoplates via a direct template conversion method in which high aspect ratio-layered Zn hydroxide sheets [Zn 5 (NO 3 ) 2 (OH) 8 ] were used as the sacrificial precursor. Successful phase conversion occurs as a result of the collaboration of low template stability and delayed delivery of 2-methylimidazole in weakly interacting solvents, particularly using acetone. When the ZIF-8 nanoplates with an average aspect ratio of 20 were shear aligned in the 6FDA-DAM polymer matrix by bar coating, the separation performance for propylene/propane far surpassed that of the previously reported mixed matrix and polymeric membranes, showing a propylene permeability of 164 Barrer and selectivity of 33.4 at 40 weight % loadings.

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We developed a solution-processable, thin, and high-dielectric polyurea-based organic gate insulator for low-voltage operation and high performance of organic thin-film transistors (OTFTs). A 60 nm-thick polyurea thin film exhibited a high dielectric constant of 5.82 and excellent electrical insulating properties owing to strong hydrogen bonding. The hydrogen bonding of the synthesized polyurea was confirmed using infrared spectroscopy and was quantitatively evaluated by measuring the interactive force using atomic force microscopy. Moreover, the effect of hydrogen bonding of polyurea on the insulating properties was systematically investigated through the combination of various monomers and control of the thickness of the polyurea film. The dinaphtho[2,3- b:2',3'- f]thieno[3,2- b]thiophene-based OTFTs with the polyurea gate insulator showed excellent thin-film transistor (TFT) performance with a field-effect mobility of 1.390 cm/V·s and an on/off ratio of ∼10 at a low operation voltage below 2 V. In addition, it is possible to fabricate flexible polymer organic semiconductor (OSC)-based TFT devices using a solution process, owing to excellent solvent stability in various organic solvents. We believe that the solution-processable polyurea gate insulator with a high dielectric constant and good insulation properties is a promising candidate for low-voltage-operated OTFTs using various OSCs.

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