In this study, the growth and photoluminescence (PL) properties of InSb/ GaSb nano-stripes grown by molecular beam epitaxy on (001) GaSb substrate are reported. In situ reflection high-energy electron diffraction observation during InSb growth shows that the growth of InSb on GaSb surface is in Stranski-Krastanov mode and results in nano-stripe formation. The obtained nano-stripes have rectangular-based structure with the height of 25.2 AE 4.0 nm and they are elongated along [110] direction. PL emission from buried InSb/GaSb nano-stripes shows the emission peak at %1850 nm (0.67 eV). According to the emission energy and the structural information, low In content of %0.24 in nominally grown InSb/GaSb nano-stripe is estimated. Power-dependent PL spectroscopy shows a linear relation between integrated PL intensity and the excitation power. Thermal activation energy of %20 meV from InSb nano-stripe emission is extracted from the temperaturedependent PL spectroscopy.