Annealing behavior between room temperature and 2000°C of deep level defects in electron-irradiated n -type 4H silicon carbide J. Appl. Phys. 98, 043518 (2005); 10.1063/1.2009816 Deep levels created by low energy electron irradiation in 4 H -SiC A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H-SiCDeep level defects in electron-irradiated 4H SiC epitaxial layers grown by chemical vapor deposition were studied using deep level transient spectroscopy. The measurements performed on electron-irradiated p ϩ n junctions in the temperature range 100-750 K revealed several electron traps and one hole trap with thermal ionization energies ranging from 0.35 to 1.65 eV. Most of these defects were already observed at a dose of irradiation as low as Ϸ 5ϫ10 13 cm Ϫ2 . Dose dependence and annealing behavior of the defects were investigated. For two of these electron traps, the electron capture cross section was measured. From the temperature dependence studies, the capture cross section of these two defects are shown to be temperature independent.
Thus, increasing UAE in this large NIDDM population in the U.S. was associated with an increased prevalence of diabetic retinopathy, neuropathy, and cardiovascular disease. This suggests that UAE may be more than an indicator of renal disease in NIDDM patients and, in fact, may reflect a state of generalized vascular damage occurring throughout the body. Prospective studies in NIDDM patients are needed to determine the predictive effect of UAE and the effect of decreasing UAE on future diabetic micro- and macrovascular complications.
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