Comparative study between erbium and erbium oxide-doped diamondlike carbon films deposited by pulsed laser deposition technique Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films Gallium oxide (Ga 2 O 3 ) thin films were made by sputter deposition employing a Ga 2 O 3 ceramic target for sputtering. The depositions were made over a wide range of substrate temperatures (T s ), from 25 to 600 C. The effect of T s on the chemical bonding, surface morphological characteristics, optical constants, and electrical properties of the grown films was evaluated using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and four-point probe measurements. XPS analyses indicate the binding energies (BE) of the Ga 2p doublet, i.e., the Ga 2p 3/2 and Ga 2p 1/2 peaks, are located at 1118.0 and 1145.0 eV, respectively, characterizing gallium in its highest chemical oxidation state (Ga 3þ ) in the grown films. The core level XPS spectra of O 1s indicate that the peak is centered at a BE $ 531 eV, which is also characteristic of Ga-O bonds in the Ga 2 O 3 phase. The granular morphology of the nanocrystalline Ga 2 O 3 films was evident from AFM measurements, which also indicate that the surface roughness of the films increases from 0.5 nm to 3.0 nm with increasing T s . The SE analyses indicate that the index of refraction (n) of Ga 2 O 3 films increases with increasing T s due to improved structural quality and packing density of the films. The n(k) of all the Ga 2 O 3 films follows the Cauchy's dispersion relation. The room temperature electrical resistivity was high ($200 X-cm) for amorphous Ga 2 O 3 films grown at T s ¼ RT-300 C and decreased to $1 X-cm for nanocrystalline Ga 2 O 3 films grown at T s ! 500-600 C. A correlation between growth conditions, microstructure, optical constants, and electrical properties of Ga 2 O 3 films is derived. V C 2014 AIP Publishing LLC.

In the current investigation, an innovative time-domain damage index is introduced for the first time which is based on local statistical features of the waveform. This damage index is called the ‘normalized correlation moment’ (NCM) and is composed of the nth moment of the cross-correlation of the baseline and comparison waves. The performance of this novel damage index is compared for some synthetic signals with that of an existing damage index based on the Pearson correlation coefficient (signal difference coefficient, SDC). The proposed damage index is shown to have significant advantages over the SDC, including sensitivity to the attenuation of the signal and lower sensitivity to the signal’s noise level. Numerical simulations using Abaqus finite element (FE) software show that this novel damage index is not only capable of detecting the delamination type of damage, but also exhibits a good ability in the assessment of this type of damage in laminated composite structures. The NCM damage index is also validated using experimental data for identification of delamination in composites.

Structural, electrical, and magnetic properties of chemical solution deposited Bi ( Fe 0.95 Cr 0.05 ) O 3 thin films on platinized silicon substrates effects on the ferroelectric and magnetic properties of chemical solution deposited Bi Fe O 3 thin films Epitaxial BiFeO 3 thin films have been grown on ͑100͒-oriented SrTiO 3 and Nb-doped SrTiO 3 substrates using the pulsed laser deposition technique under identical thermodynamic and variable kinetic conditions. The variation of growth kinetics through laser fluence and pulse repetition rate had minimal effect on the structure and magnetic properties of films. However, large changes were observed in the microstructure, with initial island growth mode approaching toward step-flow type growth and roughness reducing from 12.5 to 1.8 nm for 50 nm thick film. Correspondingly, the leakage current density at room temperature dropped consistently by almost four orders of magnitude. The dominant mechanism in low leakage current films was space-charge-limited conduction. These findings suggest that the issue of leakage current can be dealt favorably by controlling kinetic growth parameters. The application of high electric field and observation of maximum polarization value up to 103 C / cm 2 could be possible in these samples. An appearance of saturated hysteresis behavior depending upon bottom electrode was also observed. This fact is qualitatively explained on the basis of recent concepts of switchability and polarity of thin film-electrode interface.

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Pb ( Nb 0.02 Zr 0.2 Ti 0.8 ) O 3 thin films with thickness of 900nm were spincoated on platinized silicon substrate using the sol–gel method. X-ray diffraction and field emission scanning electron microscopy show that the films are highly a-axis-oriented with columnar structure. A large remnant polarization (Pr+) ∼92.2μC∕cm−2 was observed for as-grown films. The coercive field (Ec+) for these films was 159.3kV∕cm. Good pyroelectric properties are obtained as a result of large remnant and spontaneous polarization and their strong temperature dependence. The pyroelectric coefficient and figure of merit at room temperature (22°C) are 10.8×10−4Cm−2K−1 and 2.34×10−5Pa−1∕2, respectively.