Heavy metal-based two-dimensional van der Waals materials have a large, coupled spin and valley Hall effect (SVHE) that has potential use in spintronics and valleytronics. Optical measurements of the SVHE have largely been performed below 30 K, and understanding of the SVHE-induced spin/valley polarizations that can be electrically generated is limited. Here, we study the SVHE in monolayer p-type tungsten diselenide (WSe2). Kerr rotation (KR) measurements show the spatial distribution of the SVHE at different temperatures, its persistence up to 160 K, and that it can be electrically modulated via gate and drain bias. A spin/valley drift and diffusion model together with a reflection measurement and a four-port electrical measurement is used to interpret the KR data. A lower-bound spin/valley lifetime is predicted to be of 40 ns and a mean free path of 240 nm below 90 K, 2 orders of magnitude higher than a previous work that uses similar methods. The spin/valley polarization on the edge is calculated to be ∼4% at 45 K. These results are important steps toward practical use of the SVHE.

The state‐of‐the‐art magnetic tunnel junction, a cornerstone of spintronic devices and circuits, uses a magnesium oxide tunnel barrier that provides a uniquely large tunnel magnetoresistance at room temperature. However, the wide bandgap and band alignment of magnesium oxide‐iron systems increases the resistance‐area product and creates variability and breakdown challenges. Here, the authors study using first principles narrower‐bandgap scandium nitride (ScN) transport properties in magnetoresistive junctions in comparison to magnesium oxide. The results show a high magnetoresistance in Fe/ScN/Fe via Δ1 and normalΔ2′ symmetry filtering with low wave function decay rates, suggesting scandium nitride could be a new barrier material for spintronic devices.

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Large Magnetoresistance in Scandium Nitride Magnetic Tunnel Junctions Theory and simulation are essential to discovering new materials for computing. In article number 2100309, Jean Anne Incorvia, Suyogya Karki, Vivian Rogers, and co‐workers identify scandium nitride as a tunnel barrier material and compare its properties to state‐of‐the‐art magnesium oxide. The results show a high magnetoresistance with low wavefunction decay rates, suggesting scandium nitride could be used for magnetic tunnel junction‐based spintronic devices.