In this paper an analog to digital converter architecture is introduced. The proposed design is based on Up-Down counter approach SAR type ADC. This design offers less design complexity which leads to low power consumption. Based on the proposed idea, a 4-bit ADC is simulated in Microwind 3.5 environment using 45nm CMOS technology with supply voltage of 1 V. The ADC is designed with control signal like Start of conversion (SOC) and End of conversion (EOC). The ADC design consumes 3.2mW of power. The proposed ADC design is optimized to area of 829.6µm2.

Over the years, the development of the logic on the chip is increased. To sustain and drive the logic flow, various techniques and SRAM cell designs have been implemented. The basic element of memory design is 6T SRAM cell. But while dealing with this 6T SRAM cell there are some issues with the parametric analysis on the performance of the cell. This paper presents an innovative design idea of new 8T RAM cell with various parametric analysis. The proposed cell is compared with the standard cell in terms of different parameters such as area, speed and power consumption along with the loading effect with the increase in load capacitance on the cell. The structure is designed with CMOS 45 nm Technology with BSIM 4 MOS modelling using Microwind 3.5 software tool.

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