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In this paper, we present a novel single-cycle programming scheme for 4T-2R NVSRAM, exploiting pulse engineered input signals. OxRAM devices based on 3 nm thick bi-layer active switching oxide and 90 nm CMOS technology node were used for all simulations. The cell design is implemented for real-time non-volatility rather than last-bit, or power-down nonvolatility. Detailed analysis of the proposed single-cycle, parallel RRAM device programming scheme is presented in comparison to the two-cycle sequential RRAM programming used for similar 4T-2R NVSRAM bit-cells. The proposed single-cycle programming scheme coupled with the 4T-2R architecture leads to several benefits such as-possibility of unconventional transistor sizing, 50% lower latency, 20% improvement in SNM and ∼20× reduced energy requirements, when compared against two-cycle programming approach.