We report on the evaluation test of our novel pixel sensor named "XRPIX1-FZ" which is developed for the future X-ray astronomy mission. The mean gain of XRPIX1-FZ is 3.3 µV/e − and the dispersion of the gain among the pixels is 1% in the standard deviation. We confirmed the energy resolution of 260 eV in FWHM at 8 keV. We achieved the full depletion (250 µm) at 30 V back bias voltage.Keywords: Imaging spectrometer, Active pixel sensor (APS), Silicon-on-insulator (SOI) PACS: 95.55.Ka NOVEL PIXEL SENSOR FOR FUTURE X-RAY ASTRNOMYFor the detector of the future X-ray astronomy, we have been developing the novel pixel sensor which use the Silicon-On-Insulator (SOI) wafer. The SOI wafer is composed of a thick, high-resistivity Si substrate (sensor part) and a thin, low-resistivity Si layer (CMOS circuit) sandwiching a insulator (SiO 2 ) layer [1]. Each pixel has the intelligent readout circuit and is randomly accessible (i.e. active pixel sensor).We produced the first prototype named XRPIX1 which has the intra-pixel trigger in each pixel. The details and the performance of XRPIX1 are reported in [2]. Then, We developed the next device named "XRPIX1-FZ". The sensor Si of XRPIX1-FZ has ten times higher resistivity than that of XRPIX1 in order to achieve the full depletion. The other specifications such as the pixel circuit are same as that of XRPIX1 (see [2]). RESULTS OF THE EVALUATION TESTWe irradiated XRPIX-FZ with several-energy X-rays and investigated the gain. The mean gain is measured as to be 3.3 µV/e − . The dispersion of the gain among pixels SUZAKU 2011