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Our proposed “matrix-type” semiconductor detectors are applied for studying the relaxation of ion anisotropic distribution functions having several keV in the central cell of the tandem mirror GAMMA 10. The matrix-type detector array consists of compactly produced six “rows” having different thicknesses of thin dead layers (SiO2) on its surface. Each row has seven channel units (“columns”) for measuring radiation profiles in the radial direction of plasmas. These various SiO2 layers are, thus, employed as “unbreakable ultrathin radiation–absorption filters” having various thicknesses to analyze x-ray energies and distinguish x rays from neutral particles simultaneously. Development of these detectors along with high power gyrotrons allow us to investigate energy transport analyses between ion-cyclotron heated hot ions and electron-cyclotron heated electrons. An application of the matrix-type detectors reveals detailed behavior of electron and ion relaxation from the perpendicular to parallel ion energies in the central cell.