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A method for calculating diffusion enhancement due to dopant-defect pairing in ion-implanted silicon is described. The number of dopant-defect pairs is calculated from a general defect clustering model. The assumption that a net dopant flux arises from dopant-defect pair gradients leads to the calculation of an initial enhanced diffusion coefficient. This diffusion enhancement is shown to be consistent with measured transient diffusion.

Computer assisted learning in an electronics course The CAD software package Electronic Workbench has been used for computer assisted learning for analogue electronics in the second year of a degree course. After a description of the package, the approach used to generate text files to describe the subject matter for transistor biasing, small signal analysis and frequency response is described. The student response is considered, as are the problems encountered in using the package for CAL.

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