Butanol (I) wird durch die Wismutverbindung (II) zu einem Gemisch aus Butyraldehyd (III), Butylacetat (IV), Benzol (V) sowie einem Gemisch verschiedener Phenylwismut‐acetate (VI) oxidiert.

Nach einleitenden Untersuchungen zur Thermolyse der Alkoxy‐Verbindungen (I) wird deren Reaktion und die von (II) mit Triphenylsilanol (III) zu (IV) bzw. (VII) beschrieben.

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Trench surface charging at the plasma etching of dielectrics and semiconductors is a negative phenomenon because it leads to non-uniform etching of the trench bottom, undesirable etching of its wall, etch stop and breakdown of lower level device elements. To investigate the charging of a SiO 2 trench surface by argon radio frequency discharge plasma we applied the 3D Monte Carlo method for modelling the electron and ion trajectories inside a trench and used the 2D analytical method to calculate electric fields and potentials produced by the deposited charges. The secondary electron-electron emission was taken into account as a really important mechanism of electrical charge redistribution on the trench surface. The ion energy spectra were calculated for the trench aspect ratios (depth d/width w) of 1-20 and trench widths of 11, 22 and 45 nm for 180 eV ion flux. The transformation of an initial ion energy spectrum from a delta function at 180 eV into bell-shaped curves with peak shifts of 10-60 eV and broadening of 5-30 eV is obtained.