In this letter, a novel integration scheme, for metal-insulator-metal capacitors comprising perovskite-type dielectrics and Cu-based bottom electrodes, has been demonstrated on low-temperature FR4 packaging substrates. Cu oxidation during dielectric deposition and postannealing is completely avoided by a dielectric-first process flow with Ti as oxygen-getter. By using evaporated barium strontium titanate as capacitor dielectric, a maximum capacitance density (∼1250 nF/cm 2 at 100 kHz) and moderate leakage current (< 4 × 10 −5 A/cm 2 at 2 V) have been achieved with rapid thermal annealing at 700 • C. Higher temperature leads to dielectric degradation. Combined with advanced deposition techniques, this integration scheme enables realization of high-performance embedded capacitors that can be integrated with printed circuit board technology.Index Terms-Annealing, barium strontium titanate (BST), Cu electrode, oxidation, packaging substrate, metal-insulator-metal (MIM) capacitor.