Localized surface plasmon resonance (LSPR) switching was investigated in a Au/GeSbTe/Au nanosandwich as a key active element for plasmonic integrated circuits and devices. Near-infrared single-particle spectroscopy was conducted to examine the interaction of a Au nanorod (AuNR) and Au film, between which a GeSbTe layer was incorporated as an active phase-change media. Numerical calculation revealed that hybridized modes of the AuNR and Au film exhibit a significant change of scattering intensity with the phase change. In particular, the antisymmetric (magnetic resonance) mode can be modulated effectively by the extinction coefficient of GST, as well as its refractive index. Experimental demonstration of the switching operation was performed by alternate irradiation with a picosecond pulsed laser for amorphization and a continuous wave laser for crystallization. Repeatable modulation was obtained by monitoring the scattering light around the LSPR peak at λ = 1070 nm.
As a platform for active nanophotonics, localized surface plasmon resonance (LSPR) switching via interaction with a chalcogenide phase change material (GeSbTe) was investigated. We performed single-particle spectroscopy of gold nanoparticles placed on a GeSbTe thin film. By irradiation with a femtosecond pulsed laser for amorphization and a continuous wave laser for crystallization, significant switching behavior of the LSPR band due to the interaction of GeSbTe was observed. The switching mechanism was explained in terms of both a change in the refractive index and a modification of surface morphology accompanying volume expansion and reduction of GeSbTe.
We investigate the modulation of the localized surface plasmon resonance (LSPR) of a gold nanorod (AuNR) using a GeSbTe film as an active medium. We demonstrate high-contrast switching of LSPR in an AuNR/GST/Au thin film sandwich structure upon phase change. To go beyond this single-particle switching functionality, we consider a plasmon particle system interacting with a phase-change material (PCM) to discuss the possibility of parallel processing devices with memory functionality, exploiting the plasticity and threshold behavior that are inherent characteristics of PCMs. We demonstrate that the temporal and spatial evolution of a plasmon-PCM array system can be equivalent to a cellular automata algorithm.
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