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The magnetic surface acoustic wave (MSAW) device can be manipulated by an external magnetic field. However the MSAW is attenuated largely at high frequencies above MHz. Therefore, we proposed a MSAW device having a hybrid structure consisting of FeB amorphous thin film/InSb semiconductor thin film/LiNbO 3 substrate. This device is utilized for amplification of surface acoustic waves by the interaction between surface acoustic waves and the carriers in the InSb semiconductor. We prepared (111) InSb thin films by ion beam sputtering. We obtained InSb thin films having Hall mobilities of about 2000 cm 2 /Vs by subsequent annealing. This showed the possibility of MSAW amplification by low voltages.

In a magneto-surface-acoustic-wave (MSAW) device, phase velocity is controlled by an external magnetic field. We proposed amplification of MSAW with a hybrid structure of FeB amorphous film / InSb semiconductor thin film / LiNbO3 substrate, which is expected to compensate the attenuation of MSAW caused by eddy current loss. In the fabricated MSAW device having the FeB amorphous film with low coercivity and high magnetostrictive, the phase retardation of about 600 degree/cm at magnetic fields of ±300 Oe was obtained. The InSb thin film with a mobility of about 3.5×103 cm2/Vs was obtained by using annealing process. The results show possibility of the MSAW amplification.