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Epitaxial nickel disilicide film growth on silicon (100) via solid state reaction between metal layer and silicon induced by rapid heating is studied. The use of ion implantation of inert gases into a metal film prior to thermal processing is shown to allow formation of an epitaxial layer with thickness of 300 nm and Xmin = 0.1 to 0.3.

The relationship between phase formation in the Ni–Si system during solid‐state reaction stimulated by argon ion implantation and structural transformations in nickel silicide films is investigated. The epitaxial nickel silicide is found to consist only of the NiSi2 phase. The epitaxial disilicide film is shown to have thickness of more than 300 nm with a degree of perfection characterized by χmin = 0.1 when the reaction is stimulated by ion implantation.

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