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A technique is presented for characterizing photoresist films on silicon wafers using quantitative Fourier transform infrared analysis. The concentrations of diazoquinone and residual solvent can be monitored to a precision of 1.0 and 2.1% (1σ), respectively. The technique is simple and well suited for assessing the performance of various types of exposure and bake equipment, correlating the concentrations of resist components with lithographic outcomes, and comparing the photobleaching efficiencies of diazoquinone resists.

Use of surface charging in xray photoelectron spectroscopic studies of ultrathin dielectric films on semiconductors Appl.Summary Abstract: Xray photoelectron spectroscopy surface charge buildup used to study residue in deep features on integrated circuits

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