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CuCl reacts with Na[HB(R3RSpz),] and phosphine (PR,) or isonitrile (CNR) to yield volatile (pyrazolylborate)copper(r) complexes. These compounds were evaluated as MOCVD precursors. Using [ { H B (~Z )~J C U ( P E~~) ]and [ ( H B (~Z )~J C U ( P M~~) ] , thin copper films were grown by thermal metal organic chemical vapor deposition in a low pressure reactor in the temperature range 150-350 "C. Polycrystalline Cu-phases were obtained at temperatures as low as 150 "C. The metallic films were characterized by four-point-probe resistivity measurements, AES, and XPS, as well as AFM and SEM. Selective deposition on metal-seeded surface sites was observed on Pt, Au, Al, and W versus SOz. Anti-selective deposition was found to occur on Pdseeded samples.

Low pressure CVD of copper from its bis-hexafluoroacetylacetonate is studied on oxidized silicon substrates locally seeded with a 2.5 A platinum prenucleation film. Copper is deposited selectively on top of the prenucleation layer from the gaseous metalorganic compound diluted in hydrogen. The selectivity, growth rate and resistivity of the copper deposit strongly depend on the presence of water vapor in the reagent gas mixture.

The low pressure chemical vapor deposition (LPCVD) of copper from its bis-hexafluoroacetylacetonate is studied on oxidized silicon substrates partially covered with a platinum seeding layer. With a known concentration of water vapor in the gas mixture, almost equal copper film growth rates are obtained when using either hydrogen or helium as carrier gas. For both carrier gases, an increase of the copper growth rate is observed with an increasing amount of water vapor added to the gas mixture, and deposition rates above 500 Å/min are obtained. The chemical purity and electrical conductivity of the copper deposit are as high in the case of a helium carrier gas as in the case of a hydrogen carrier gas. Implications for the mechanism of copper LPCVD are discussed.

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