Optical emission spectroscopy in the range from 200 to 800 nm was applied for investigation of the copper plasma produced by a metal vapor vacuum arc plasma source. The experiments were conducted for the cases when the plasma was guided by straight and Ω-shaped curved solenoids as well as without solenoids and, also, for different vacuum conditions. It was found that, besides singly and doubly charged ions, a relatively high concentration of excited neutral copper atoms was present in the plasma. The relative fraction of excited atoms was much higher in the region close to the cathode surface than in the plasma column inside the solenoid. The concentration of excited neutral, singly-and doubly-ionized atoms increased proportionally when the arc current was increased to 400 A. Some weak lines were attributed to more highly ionized copper species and impurities in the cathode material.
Metal-containing tetrahedral amorphous carbon films were produced by dual filtered cathodic vacuum arc plasma sources operated in sequentially pulsed mode.Negatively pulsed bias was applied to the substrate when carbon plasma was generated, whereas it was absent when the molybdenum plasma was present. Film thickness was measured after deposition by profilometry. Glass slides with silver pads were used as substrates for the measurement of the sheet resistance. The microstructure and composition of the films were characterized by Raman spectroscopy and Rutherford backscattering, respectively. It was found that the electrical resistivity decreases with an increase of the Mo content, which can be ascribed to an increase of the sp 2 content and an increase of the sp 2 cluster size.
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