We show that magnetic response at terahertz frequencies can be achieved in a planar structure composed of nonmagnetic conductive resonant elements. The effect is realized over a large bandwidth and can be tuned throughout the terahertz frequency regime by scaling the dimensions of the structure. We suggest that artificial magnetic structures, or hybrid structures that combine natural and artificial magnetic materials, can play a key role in terahertz devices.

Control of the orientation, diameter, and length of silicon nanowires (SiNWs) is achieved in large‐scale single‐crystalline SiNW arrays fabricated by a statistical electroless metal deposition technique. Taguchi methods are employed to optimize the diameter control and to understand the influence of all processing factors on the growth. The 〈100〉 directions are found to be the preferred crystallographic orientation of the growing SiNWs (see figure).

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