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The electrical characteristics of bottom-contact pentacene-based organic thin-film transistors with polytetrafluoroethylene (PTFE) as the buffer layer were investigated. PTFE can provide a hydrophobic surface to improve the molecular orientation of the grown pentacene channel layer. In addition, the contact resistance (RC) between the pentacene channel layer and source/drain electrodes can be decreased as a result of the carriers injection by tunneling through the thin PTFE buffer layer (1.5 nm) into the pentacene channel layer. Compared to device without PTFE buffer layer, the saturation drain current and field-effect mobility of the proposed device were increased by 93% and 105%, respectively.

Photoemission measurements have been made of the intermetallic compound Pd 2 TiAl utilizing synchrotron radiation in the energy range 40-180 eV. The valence band extends to a binding energy of 7 eV. Measurements made at the Cooper minimum for Pd 4d indicate that the highest density of states for Ti 3d is at the Fermi edge and that it decreases towards higher energy. Using this density of states and correcting for the photoemission cross-sections with energy, it has been possible to determine the density of states for Pd 4d which also contributes to the Fermi level. Resonance photoemission measurements are consistent with this conclusion and also indicate that the Pd 4d band is not completely full.