Halide perovskites, including CsPbX (X = Cl, Br, I), have gained much attention in the field of optoelectronics. However, the toxicity of Pb and the low photoluminescence quantum yield (PLQY) of these perovskites hamper their use. In this work, new halide materials that meet the requirements of: (i) nontoxicity, (ii) high PLQY, and (iii) ease of fabrication of thin films via the solution process are explored. In particular, copper(I) halide compounds with low-dimensional electronic structures are considered. Cs Cu I has a 0D photoactive site and exhibits blue emission (≈445 nm) with very high PLQYs of ≈90 and ≈60% for single crystals and thin films, respectively. The large exciton binding energy of ≈490 meV explains well the 0D electronic nature of Cs Cu I . Blue electroluminescence of Pb-free halides is demonstrated using solution-derived Cs Cu I thin films.

Oxide semiconductors afford a promising alternative to organic semiconductors and amorphous silicon materials in applications requiring transparent thin film transistors (TFTs). We synthesized an aqueous inorganic precursor by a direct dissolution of zinc hydroxide in ammonium hydroxide solution from which a dense and uniform ZnO semiconducting layer is achieved. Solution-processed ZnO-TFTs prepared at 140 C by microwave irradiation have shown enhanced device characteristics of $1.7 cm 2 V À1 s À1 mobility and a $10 7 on/off current ratio, with good air stability. Spectroscopic analyses confirmed that such a device improvement originates from accelerated dehydroxylation and better crystallization at low temperature by microwave irradiation. Our results suggest that solutionprocessable oxide semiconductors have potential for low-temperature and high-performance applications in transparent devices.

Solution‐processed, fully flexible ZnO thin‐film transistors (TFTs) on semitransparent substrates are demonstrated. Our devices show exceptional and unprecedented stablity against various bending stresses, i.e., bending, rolling, wearing, and folding, exhibiting no degradation at tensile strains up to 6.35%.

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Transparent amorphous semiconductors (TAS) that can be fabricated at low temperature are key materials in the practical application of transparent flexible electronics. Although various n-type TAS materials with excellent performance, such as amorphous In-Ga-Zn-O (a-IGZO), are already known, no complementary p-type TAS has been realized to date. Here, a material design concept for p-type TAS materials is proposed utilizing the pseudo s-orbital nature of spatially spreading iodine 5p orbitals and amorphous Sn-containing CuI (a-CuSnI) thin film is reported as an example. The resulting a-CuSnI thin films fabricated by spin coating at low temperature (140 °C) have a smooth surface. The Hall mobility increases with the hole concentration and the largest mobility of ≈9 cm V s is obtained, which is comparable with that of conventional n-type TAS.