Semiconductor nanotube structures have attracted much interest for building blocks of future nanoscale electronic and optical devices. Here, we investigate the structural properties of straininduced self-rolled III-V semiconductor nanotubes. The III-V semiconductor structures for nanotube formation were grown on InP substrates. The bilayer and the quantum-well structures are grown using a metalorganic chemical-vapor deposition system and were fabricated into selfrolled nanotubes. For the self-rolling process, ternary InxGa1−xAs layers were used to produce a lattice-mismatch strain in the nanotube membrane. The experimental observations of the nanotube structures are discussed.

In this study, the characteristics of WO3 prepared with acidic solution were analyzed. The acidic solution was prepared by using hydrochloric acid and sulfuric acid as the solutions to be added during the hydrothermal synthesis process. SEM, XRD and electrochemical characteristics tests were performed based on the prepared samples. Samples prepared in hydrochloric acid (W1) solution can identify platelet crystals and nanospheres, and samples made from sulfuric acid (W2) solutions can identify nanospheres and nanocubes. From the XRD data, it was confirmed that all of the diffraction peaks had a hexagonal phase. Electrochemical properties showed good rate capability of W1 samples but low capacitance and W2 samples showed relatively high capacitances.