, 3D patterning of silicon by contact etching with anodically biased nanoporous gold electrodes, Electrochemistry Communications (2017Communications ( ), doi:10.1016Communications ( /j.elecom.2017 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.
A C C E P T E D M A N U S C R I P T
ABSTRACTA novel strategy to achieve 3D pattern transfer into silicon in a single step without using lithography is presented. Etching is performed electrochemically in HF media by contacting silicon with a positively biased, patterned, metal electrode. Dissolution is localized at the Si/metal contacts and patterning is obtained as the electrode digs into the substrate. Previous attempts at imprinting Si using bulk metal electrodes have been limited by electrolyte blockage. Here, the problem is solved by using, for the first time, a nanoporous metal electrode that allows the electrolyte to access the entire Si/metal interface, irrespective of the electrode dimensions. As a proof of concept, imprinting of well-defined arrays of inverted pyramids has been performed with sub-micrometer spatial resolution over 1 mm 2 using a nanoporous gold electrode of the complementary shape. Under a polarization of +0.3 V/SME in 5M HF, the etch rate is ~0.5 µm/min. The pyramidal pattern is imprinted independently of the Si crystallographic orientation. This maskless imprinting technique opens new opportunities in the fabrication of Si microstructures.
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