Multilayer graphene nanoribbon (MLGNR) is a potential candidate in nanoscale very large scale integration (VLSI) interconnects. A detailed analysis emphasizing the impact of GNR's edge shape in an armchair (ac) and zigzag (zz) structures on crosstalk performance considering undoped and doped (intercalated with AsF 5 and FeCl 3 ) MLGNR interconnects is presented. A capacitively-coupled driver-interconnect-load (DIL) line configuration is used to analyze both the functional and dynamic crosstalk at 14 nm technology node for global interconnects. A temperature-dependent equivalent single conductor (TD-ESC) model is considered. It is observed that over a temperature range from 300 to 500 K, crosstalk-induced low noise peaks in doped MLGNRs are obtained with zz-edges as compared with undoped MLGNR, whereas, the time duration of crosstalk-induced noise is small for doped MLGNRs with ac-edges. Similar findings are obtained in terms of propagation delay and crosstalk-induced delay for single and coupled interconnects, respectively, that is, the delays obtained in both kinds are small for doped MLGNR with ac-edges. It is also observed that AsF 5 -doped MLGNR outperforms FeCl 3 -doped MLGNR in terms of crosstalk-induced noise and delay. The results of MLGNR are also compared with the mixed carbon-nanotube bundle (MCB).

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An analytical frequency‐domain model, based on a temperature‐dependent equivalent‐single‐conductor (ESC) model, for coupled interconnects of multilayer graphene nanoribbon (MLGNR) and mixed carbon‐nanotube bundle (MCB) is presented. In this model, the input‐output transfer function of coupled interconnects is derived under dynamic switching conditions to analyze its bandwidth, delay, and stability performance. The obtained results demonstrate the best bandwidth performance of AsF5‐doped‐MLGNR among the undoped‐MLGNR (U‐MLGNR), doped‐MLGNR (viz., AsF5‐doped and FeCl3‐doped), MCB, and Cu interconnects. An improvement in a bandwidth of 14, 8.8, and 63.2 GHz is obtained with global length (≈1000 µm) AsF5‐doped‐MLGNR in comparison with U‐MLGNR, MCB, and Cu, respectively. Based on the Nyquist stability criterion, interconnects of doped‐MLGNR are found more stable than their U‐MLGNR and MCB counterparts, however, less stable than Cu interconnects. Also, a frequency‐domain model for complementary metal–oxide semiconductor (CMOS)‐gate‐driven single MLGNR interconnect is derived. It is noted that using the proposed CMOS‐gate based model, a bandwidth improvement of 12.25× is obtained with global length AsF5‐doped‐MLGNR with respect to a linear resistive model. Furthermore, the temperature‐dependent, frequency‐domain analysis of the capacitively coupled interconnects under functional switching conditions reveals that AsF5‐doped‐MLGNR interconnects are highly capable of filtering out the noise frequency components in the crosstalk‐induced noise