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A self-assembled monolayer (SAM) of a 2-bromoisobutyryl end group-carrying initiator for atom transfer radical polymerization (ATRP) was constructed on the surface of silicon wafer or glass substrates via a silane-coupling reaction. When the initiator SAM was irradiated with UV light at 254nm, the surface density of bromine atoms was reduced by the scission of CBr bonds as observed by XPS. With the surface-initiated ATRP of the zwitterionic vinyl monomer, carboxymethyl betaine (CMB), the surface density of PCMB brushes could be easily varied by changing the irradiation period of UV light prior to the polymerization. Furthermore, by using a UV-cut shutter sliding above the initiator SAM-modified substrate at a constant speed, the degree of bromine atom removal could be linearly varied along the direction of movement of the shutter. Consequently, the amount of both proteins adsorbed and cells adhered to the PCMB brush-covered substrate could easily be controlled by the gradation of the surface density of PCMB brushes, which suppressed protein adsorption and cell adhesion. Such a technique is very simple and useful for the regulation of the surface density of adsorbed proteins and adhered cells on an originally bio-inert surface.

The shrinkage of resist pattern during in-line SEM measurement has been argued and studied as one of the problems unsettled for manufacturing with ArF photolithography. Many of attempts to solve this problem have focused their attentions on the improvement of resist and inspection equipment. We bring up BARC (bottom anti-reflective coating) as a new impact factor on SEM shrinkage of resist. Practically, although the same resist was employed, our shrinkage tests gave the results depending on the kind of BARC. Feature size and depth of focus also affect SEM shrinkage of resist. Effect of reflectivity on SEM shrinkage was evaluated by changing thickness of BARCs and resultantly was somewhat significant. In this paper, the BARC-dependent results of SEM shrinkage are analyzed and discussed to provide a possibility that BARC may have another function of reducing SEM shrinkage.

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193nm immersion Lithography will be installed at 45nm and beyond. For severe CD control, BARC (Bottom Antireflective Coating) has been used and this material must be used for immersion lithography.So far, we have developed several BARCs with various advantages (fast etch rate, broad resist compatibility, high adhesion, conformal…etc). Especially in an immersion process, development of BARC has to satisfy for the optical control and defectivity.The reflectivity control at Hyper NA is not same as the lower NA, because optical pass length in the BARC is not the same between low NA and High NA. In order to achieve enough etch selectivity to the substrate, hard mask materials are necessary. These under layers have absorption at 193nm. As a result of simulation, target optical parameters of next BARC should be low k value (k = ~0.25) for multi BARC stack.On the other hand, the defect issue must be decreased in the immersion process. However, the generation of many kinds of defects is suspected in the immersion process (water mark, blob defect, sublimation defect…etc). Regarding the BARC, there are also several specific defects in this process. Especially, after edge bead rinse, film peeling at edge area is one of the concerns. We researched the root cause of edge peeling and a solution for this defect.In this paper, we will discuss the detail of our BARC approach for litho performance, optical parameter, leaching, sublimation, edge peel defects and etch selectivity, and introduce new BARC for 193nm immersion lithography.