No abstract

The (111)-oriented chemical-vapor-deposited diamond homoepitaxial layers with low defect density exhibited well-resolved free-exciton transitions in cathodoluminescence at 13 K and a sharp peak at 1332 cm À1 (linewidth: 1.9 cm À1 ) in Raman scattering. Furthermore, using these (111) layers, we fabricated metal-semiconductor field-effect transistors (FETs). FETs with an 11-mm-long gate exhibited a maximum drain current of 24 mA/mm and maximum transconductance of 14 mS/mm. These values are of the same order as those for the (001) orientation.