The wearable biosensing and food safety monitoring equipment requires high-brightness and thermally stable nearinfrared (NIR) phosphor-converted light emitting diodes (pc-LEDs), and the performance of these pc-LEDs is highly dependent on the properties of the NIR phosphors. This work reports an ultrawide near-infrared emission phosphor Ca 3 Sc 2 Si 3 O 12 : Cr 3+ . Under 460 nm excitation, Ca 3 Sc 2 Si 3 O 12 : Cr 3+ presents an ultrawide emission range from 650 to 900 nm. The weak absorption capacity of Cr 3+ is the main factor causing its undesirable luminous efficiency. Ce 3+ was introduced into the matrix as a role of sensitizer to contribute to the improvement of the absorption of Cr 3+ . An efficient process for energy transfer from Ce 3+ to Cr 3+ can be observed within the Ca 3 Sc 2 Si 3 O 12 codoped substance with Ce 3+ and Cr 3+ . The sample with the best doping concentration has demonstrated excellent thermal stability. At a particular temperature at 150 °C, the phenomenon of the near-infrared emission intensity is maintained at 82% at room temperature. The output power of the NIR-pc-LED based on the Ca 3 Sc 2 Si 3 O 12 : Ce 3+ , Cr 3+ and 450 nm chip reached 21.65 mW@350 mA. The excellent performance of penetrating human tissues demonstrated by the near-infrared pc-LED was observed.
A series of BaLi 2 Al 2 Si 2 N 6 (BLASN): xEu 2+ phosphors are successfully synthesized and their crystal structure and luminescence properties under varying hydrostatic pressures are reported herein. Structure variation is analyzed using in situ high-pressure X-ray diffraction and Rietveld refinements. Based on decay curves and Gaussian fitting of emission spectra, the presence of two photoluminescence centers is demonstrated. BaLi 2 Al 2 Si 2 N 6 : 0.01Eu 2+ exhibits an evident peak position shift from 532 to 567 nm with an increase in pressure to ≈20 GPa. The possible factors and mechanisms for the variations are studied in detail. At a pressure of 16 GPa, BLASN: Eu 2+ realizes a narrow yellow emission with a full width at half maximum of ≈70 nm. The addition of BLASN: Eu 2+ (16 GPa) to the commercial white light-emitting diodes combination consisting of an InGaN chip, β-SiAlON: Eu 2+ , and red K 2 SiF 6 :Mn 4+ , can increase the color gamut by ≈15%, demonstrating the promising potential of pressure-driven BLASN: Eu 2+ for wide-color gamut spectroscopy applications. Moreover, the emission shifts arising from pressure variation and the distinct color changes enable its potential utility as an optical pressure sensor; the material exhibits high pressure sensitivity (dλ/dP ≈ 1.58 nm GPa −1 ) with the advantage of visualization.
For exploring new and efficient luminescent materials, we developed an efficient narrow-band blue-emitting phosphor Eu2+ doped Na3CsMg7(PO4)6. Under near-ultraviolet light excitation, the phosphor can emit bright blue light with narrow...
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