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Thermal oxidation process of silicon carbide (SiC) has been studied by performing in-situ spectroscopic ellipsometry. In our previous work, we, for the first time, found that the growth rates of SiC(000 " 1 1) C-face at oxidation thicknesses less than around 20 nm are much higher than those given by the Deal-Grove (D-G) model. In this report, we show that such a growth rate enhancement occurs also in the oxidation of SiC(0001) Si-face. By applying the empirical equation proposed by Massoud et al. [J. Electrochem. Soc. 132 (1985) 2685] to the oxidation of SiC Si-face and comparing the temperature and oxygen partial pressure dependences of oxidation rate parameters obtained with those for C-face, we discuss the difference in oxidation mechanism between SiC Si-and C-faces.

The thermal oxidation of silicon carbide (SiC) has been studied by performing in-situ ellipsometry. We have found that the oxidation rates at the oxidation thickness of approximately less than around 20 nm are much larger than those given using the Deal-Grove (D-G) model, suggesting that the oxidation time dependence of the oxide thickness cannot be explained using the D-G model, i.e., a simple linear-parabolic model, in the initial oxidation stage. By using the empirical relation, which has been proposed for Si oxidation, i.e., adding an exponential term to the D-G equation, the origin of the growth rate enhancement in SiC oxidation has been discussed.

Real time observations of SiC (000–1) C-face and (0001) Si-face oxidation were performed using an in-situ ellipsometer over the oxygen-partial-pressure range from 0.1 to 1.0 atm. We analyzed the relations between oxide growth rate and oxide thickness by applying an empirical relation proposed by Massoud et al. We found the occurrence of oxidation enhancement in the thin oxide regime also for Si-face as well as for C-face. We have discussed the oxygen-partial-pressure dependence of the oxidation rate constants between SiC C- and Si face, comparing with that of Si.

AVSTRACTThe purpose of this study was to refine the items on a scale measuring interprofessional collaborative competency that was developed by the authors in an earlier pilot study. A questionnaire-based study was conducted with a sample of 2133 health professionals using the reformulated questionnaire. Construct validity was tested by comparing the survey results with a covariance structure analysis and the domains of interprofessional collaboration competencies presented in previous studies. A second survey was conducted 2 weeks later with a sample of 571 nursing professionals, using the same survey form to test its reliability. We constructed a model comprising 29 observed variables and six latent variables (the Chiba Interprofessional Competency Scale: CICS29), and obtained the following values for the model's goodness of fit: GFI = 0.925, AGFI = 0.908, CFI = 0.950, RMSEA = 0.049. With regard to reliability, we obtained scores ranging from 0.65 to 0.77 for the intraclass correlation coefficients of the six domains. Compared with the interprofessional collaboration scales indicated in previous studies, the CICS29 was found to have subsumed the key concepts that should be configured as interprofessional collaboration competencies. The CICS29 appeared to have satisfactory levels of reliability and validity and is recommended as a scale for measuring competencies of interprofessional practice. ARTICLE HISTORY