For safe electrical stimulation with body-implanted devices, the degradation of stimulus electrodes must be considered because it causes the unexpected electrolysis of water and the destruction of tissues. To monitor the charge injection property (CIP) of stimulus electrodes while these devices are implanted, we have proposed a charge injection monitoring system (CIMS). CIMS can safely read out voltages produced by a biphasic current pulse to a stimulus electrode and CIP is calculated from waveforms of the acquired voltages. In this paper, we describe a wide-range and low-power analog front-end (AFE) for CIMS that has variable gain-frequency characteristics and low-power analog-to-digital (A/D) conversion to adjust to the degradation of stimulus electrodes. The designed AFE was fabricated with 0.18 µm CMOS technology and achieved a valuable gain of 20-60 dB, an upper cutoff frequency of 0.2-10 kHz, and low-power interleaving A/D conversion. In addition, we successfully measured the CIP of stimulus electrodes for body-implanted devices using CIMS.

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A less invasive Si optoneural probe with an embedded optical fiber was proposed and successfully fabricated. The diameter of the optical fiber was completely controlled by hydrogen fluoride etching, and the thinned optical fiber can propagate light without any leakage. This optical fiber was embedded in a trench formed inside a probe shank, which causes less damage to tissues. In addition, it was confirmed that the optical fiber embedded in the probe shank successfully irradiated light to optically stimulate gene transfected neurons. The electrochemical impedance of the probe did not change despite the light irradiation. Furthermore, probe insertion characteristics were evaluated in detail and less invasive insertion was clearly indicated for the Si optoneural probe with the embedded optical fiber compared with conventional optical neural probes. This neural probe with the embedded optical fiber can be used as a simple and easy tool for optogenetics and brain science.

A Si neural probe is one of the most important tools for neurophysiology and brain science because of its various functions such as optical stimulation and drug delivery. However, the Si neural probe is not robust compared with a metal tetrode, and could be broken by mechanical stress caused by insertion to the brain. Therefore, the Si neural probe becomes more useful if it has a stress sensor that can measure mechanical forces applied to the probe so as not to be broken. In this paper, we proposed and fabricated the Si neural probe with a piezoresistive force sensor for minimally invasive and precise monitoring of insertion forces. The fabricated piezoresistive force sensor accurately measured forces and successfully detected insertion events without buckling or bending in the shank of the Si neural probe. This Si neural probe with a piezoresistive force sensor has become one of the most versatile tools for neurophysiology and brain science.