In this paper, for an inductively heated Czochralski furnace used to grow sapphire single crystal, influence of the inner (wall‐to‐wall) and crystal internal (bulk) radiation on the characteristics of the growth process such as temperature and flow fields, structure of heat transfer and crystal‐melt interface has been studied numerically using the 2D quasi‐steady state finite element method. The obtained results of global analysis demonstrate a strong dependence of thermal field, heat transport structure and crystal‐melt interface on both types of radiative heat transfer within the growth furnace.

KCl alkali halide crystal with different nanodiamond impurity was grown by Czochralski method. X‐Ray diffraction of the outcome samples reveals that they are still single crystal. Also crystal hardness observation reveals that the hardness of KCl single crystal has been increased by adding different percentage of nanodiamond impurity. In addition, the study of FTIR spectrums of the pure and doped crystals represents that the KCl optical properties has not changed.