Over the last few years, the directed self-assembly of block copolymers by surface patterns has transitioned from academic curiosity to viable contender for commercial fabrication of nextgeneration nanocircuits by lithography. Recently, it has become apparent that kinetics, and not only thermodynamics, plays a key role for the ability of a polymeric material to self-assemble into a perfect, defect-free ordered state. Perfection, in this context, implies not more than one defect, with characteristic dimensions on the order of 5 nm, over a sample area as large as 100 cm 2 . In this work, we identify the key pathways and the corresponding free energy barriers for eliminating defects, and we demonstrate that an extraordinarily large thermodynamic driving force is not necessarily sufficient for their removal. By adopting a concerted computational and experimental approach, we explain the molecular origins of these barriers and how they depend on material characteristics, and we propose strategies designed to overcome them. The validity of our conclusions for industrially relevant patterning processes is established by relying on instruments and assembly lines that are only available at state-of-the-art fabrication facilities, and, through this confluence of fundamental and applied research, we are able to discern the evolution of morphology at the smallest relevant length scales-a handful of nanometers-and present a view of defect annihilation in directed self-assembly at an unprecedented level of detail.directed self-assembly | copolymer | defect | minimum free energy path | string method O ver the last decade, the directed self-assembly (DSA) of block copolymers has rapidly evolved from mere intellectual curiosity (1-4) to a potentially crucial step in the commercial fabrication of next-generation electronic circuits. Indeed, the characteristic length scale of ordered self-assembled copolymer domains is in the range of 5-50 nm. Furthermore, their size and shape can be manipulated through simple processing steps, thereby making them attractive for the production of semiconductor devices, nanofluidic devices, or high-density storage media (5, 6). The general idea behind copolymer DSA is that a surface patternchemical or topographic-can be used to guide the assembly of a polymeric material into an ordered, device-like structure that is free of defects. In so-called "density multiplication" patterning strategies (7,8), the spacing or pitch of the surface features can be much larger than the characteristic dimensions of the copolymer of interest. One can thus prepare coarse surface patterns, which are easier to create, and rely on the copolymer to self-assemble into features whose density is considerably larger. Fig. 1 shows a schematic representation of the process for obtaining a lamellar morphology on a stripe-patterned substrate under a one-to-three (or 3X) density multiplication strategy. Patterned stripes interact preferentially with one of the blocks and guide the assembly of thin copolymer films into ordered lam...

PMMA (poly(styrene-block-methyl methacrylate)) block copolymer and sequential infiltration synthesis (SIS). A key advance relates to the use of PMMA majority block copolymer films and the optimization of thermal annealing temperature and substrate chemistry to achieve through-film vertical PS cylinders. The resulting morphology allows for direct fabrication of nanoporous AlOx by selective growth of Al2O3 in the PMMA matrix during the SIS process, followed by polymer removal using oxygen plasma. Control over the pore diameter is achieved by varying the number of Al2O3 growth cycles, leading to pore size reduction from 21 nm to 16 nm. Three-dimensional characterization, using TEM tomography, reveals that the AlOx channels are continuous through the film and have a gradual increase in pore size with depth. Finally, we demonstrate the ultrafiltration performance of the fabricated AlOx membrane for protein separation as a function of protein size and charge.

Understanding and controlling the three-dimensional structure of block copolymer (BCP) thin films is critical for utilizing these materials for sub-20 nm nanopatterning in semiconductor devices, as well as in membranes and solar cell applications. Combining an atomic layer deposition (ALD)-based technique for enhancing the contrast of BCPs in transmission electron microscopy (TEM) together with scanning TEM (STEM) tomography reveals and characterizes the three-dimensional structures of poly(styrene-block-methyl methacrylate) (PS-b-PMMA) thin films with great clarity. Sequential infiltration synthesis (SIS), a block-selective technique for growing inorganic materials in BCPs films in an ALD tool and an emerging technique for enhancing the etch contrast of BCPs, was harnessed to significantly enhance the high-angle scattering from the polar domains of BCP films in the TEM. The power of combining SIS and STEM tomography for three-dimensional (3D) characterization of BCP films was demonstrated with the following cases: self-assembled cylindrical, lamellar, and spherical PS-b-PMMA thin films. In all cases, STEM tomography has revealed 3D structures that were hidden underneath the surface, including (1) the 3D structure of defects in cylindrical and lamellar phases, (2) the nonperpendicular 3D surface of grain boundaries in the cylindrical phase, and (3) the 3D arrangement of spheres in body-centered-cubic (BCC) and hexagonal-closed-pack (HCP) morphologies in the spherical phase. The 3D data of the spherical morphologies was compared to coarse-grained simulations and assisted in validating the simulations' parameters. STEM tomography of SIS-treated BCP films enables the characterization of the exact structure used for pattern transfer and can lead to a better understating of the physics that is utilized in BCP lithography.

Hybrid composites of semiconducting polymers and metal oxides are promising combinations for solar cells. However, forming a well-controlled nanostructure with bicontinuous interpenetrating networks throughout the photoactive film is difficult to achieve. Pre-structured ''mesoporous'' metal oxide electrodes can act as a well-defined template for latter polymer infiltration. However, the long range infiltration of polymer chains into contorted porous channels has appeared to elude the scientific community, limiting the advancement of this technology. Here we present a structural and electronic characterisation of poly(3-hexylthiophene) (P3HT) infiltrated into mesoporous dye-sensitized TiO 2 . Through a combination of techniques we achieve uniform pore filling of P3HT up to depths of over 4 mm, but the volumetric fraction of the pores filled with polymer is less than 24%. Despite this low pore-filling, exceptionally efficient charge collection is demonstrated, illustrating that pore filling is not the critical issue for mesoporous hybrid solar cells.

Sequential infiltration synthesis (SIS) is an emerging method for vapor-phase growth of inorganic materials within polymers that is utilized for hybrid organic–inorganic and inorganic nanostructure fabrication. The range of SIS applications has been continuously expanding for the past decade. A fundamental understanding of precursor–polymer interactions is, however, essential to expand the use of SIS to additional chemistries and move beyond thin film polymer templates. This work utilizes density functional theory (DFT) calculations and in situ gravimetric analysis to probe the growth mechanism of trimethyl­aluminum (TMA) within poly­(methyl methacrylate) (PMMA) and poly­(2-vinylpyridine) (P2VP). The theoretical and experimental analyses reveal that each precursor–polymer pair is characterized by a balance point temperature at which rates of forward and reverse precursor–polymer binding enable maximum mass gain at thermodynamic equilibrium. At short exposure times, mass gain is significantly influenced by the pressure profile of the process chamber. Mechanism comprehension enabled nanopatterning of a previously unsuitable block copolymer (BCP), polystyrene-block-P2VP (PS-b-P2VP), at elevated temperatures. It was proven possible to grow significant mass while maintaining the pattern by stabilizing the morphology via a single cycle at low-temperature SIS, thus overcoming self-assembly sensitivity to temperature.