With the recent developments in secondary ion mass spectrometry (SIMS), it is now possible to obtain molecular depth profiles and 3D molecular images of organic thin films, i.e. SIMS depth profiles where the molecular information of the mass spectrum is retained through the sputtering of the sample. Several approaches have been proposed for "damageless" profiling, including the sputtering with SF5(+) and C60(+) clusters, low energy Cs(+) ions and, more recently, large noble gas clusters (Ar500-5000(+)). In this article, we evaluate the merits of these different approaches for the in depth analysis of organic photovoltaic heterojunctions involving poly(3-hexylthiophene) (P3HT) as the electron donor and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) as the acceptor. It is demonstrated that the use of 30 keV C60(3+) and 500 eV Cs(+) (500 eV per atom) leads to strong artifacts for layers in which the fullerene derivative PCBM is involved, related to crosslinking and topography development. In comparison, the profiles obtained using 10 keV Ar1700(+) (∼6 eV per atom) do not indicate any sign of artifacts and reveal fine compositional details in the blends. However, increasing the energy of the Ar cluster beam beyond that value leads to irreversible damage and failure of the molecular depth profiling. The profile qualities, apparent interface widths and sputtering yields are analyzed in detail. On the grounds of these experiments and recent molecular dynamics simulations, the discussion addresses the issues of damage and crater formation induced by the sputtering and the analysis ions in such radiation-sensitive materials, and their effects on the profile quality and the depth resolution. Solutions are proposed to optimize the depth resolution using either large Ar clusters or low energy cesium projectiles for sputtering and/or analysis.

Organic depth profiling using secondary ion mass spectrometry (SIMS) provides valuable information about the three-dimensional distribution of organic molecules. However, for a range of materials, commonly used cluster ion beams such as C60(n+) do not yield useful depth profiles. A promising solution to this problem is offered by the use of nitric oxide (NO) gas dosing during sputtering to reduce molecular cross-linking. In this study a C60(2+) ion beam is used to depth profile a polystyrene film. By systematically varying NO pressure and sample temperature, we evaluate their combined effect on organic depth profiling. Profiles are also acquired from a multilayered polystyrene and polyvinylpyrrolidone film and from a polystyrene/polymethylmethacrylate bilayer, in the former case by using an optimized set of conditions for C60(2+) and, for comparison, an Ar2000(+) ion beam. Our results show a dramatic improvement for depth profiling with C60(2+) using NO at pressures above 10(-6) mbar and sample temperatures below -75 °C. For the multilayered polymer film, the depth profile acquired using C60(2+) exhibits high signal stability with the exception of an initial signal loss transient and thus allows for successful chemical identification of each of the six layers. The results demonstrate that NO dosing can significantly improve SIMS depth profiling analysis for certain organic materials that are difficult to analyze with C60(n+) sputtering using conventional approaches/conditions. While the analytical capability is not as good as large gas cluster ion beams, NO dosing comprises a useful low-cost alternative for instruments equipped with C60(n+) sputtering.

The enhancement of the static secondary ion mass spectrometry (SIMS) signals resulting from the injection, closely to the sample surface, of H 2 O vapor at relatively high-pressure, was investigated for a set of organic materials. While the ion signals are generally improved with increasing H 2 O pressure upon 12 keV Ga ϩ bombardment, a specific enhancement of the protonated ion intensity is clearly demonstrated in each case. For instance, the presence of H 2 O vapor induces an enhancement by one order of magnitude of the [M ϩ H] ϩ static SIMS intensity for the antioxidant Irgafos 168 and a ϳ1.5-fold increase for polymers such as poly(vinyl pyrrolidone).

Molecular semiconductor devices, such as light-emitting diodes and photovoltaic cells, have recently received considerable attention because of their compatibility with flexible substrates and large-area applications. Because of the importance of the interfacial properties for the performance of the devices, these organic (multi)layers constitute an important field of application for molecular depth profiling by SIMS. In this contribution, we investigate the use of C 60 n+ and Ar 1000-2000 + cluster projectiles at different energies (ranging from 2.5 to 20 keV) as sputter ions for the organic depth profiling of fullerene-based films and heterojunctions. The bilayers consist of C 60 fullerenes on tin phthalocyanine (SnPc), deposited on silicon substrates. Our preliminary results showed that C 60 films could not be successfully profiled using C 60 n+ ions in regular analysis conditions (room temperature). In contrast, with Ar clusters, the depth profiling is successful (except for 20 keV Ar 1000 ) and the sputtered volume shows a linear relationship with the Ar cluster energy. Surprisingly, for a given total energy of the projectiles, Ar 2000 sputters approximately two times more than Ar 1000 . The observations are tentatively explained as being the result of a balance between the sputtering and the cross-linking efficiency for the different bombardment conditions, larger clusters being expected to naturally induce less cross-linking than smaller clusters with the same total energy.