Single-electron motions near the chamber wall of a type of inductively coupled magnetized plasmas were analyzed using a Monte Carlo method to understand the mechanism of electron energy gain (EEG). The analysis revealed a counterintuitive mechanism that electron reflection promotes the EEG in the presence of E × B drifts and collisional scattering. Distributions of EEG, energy loss, and mean electron energy were calculated using a simplified flat wall model at various strengths of electric and magnetic fields and remaining energy ratios at specular and diffuse reflections. A high stochastic EEG was observed near the wall clearly at high electric and weak magnetic fields not only in the elastic specular reflection model but also in the inelastic diffuse reflection model. An effect of boundary on the EEG mechanism was explained from the viewpoint of microscopic electron behavior.

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