Abstract.Multiple surface plasmon resonances are experimentally observed for p-polarized as well as s-polarized incident light at the planar interface of a metal and a chiral sculptured thin film. These experimental results confirm that four surface plasmon resonances can be supported at the interface of metal-chiral sculptured thin film. Multiple surface plasmon resonances may allow for multiple simultaneous measurements by devices that utilize surface plasmon resonance for detection. C 2010 Society of Photo-Optical Instrumentation Engineers.

Properties of nano-scale materials are very different from those in bulk form. The electrical resistivity of gold thin film as a function of film thickness is experimentally studied and presented here. The resistivity decreases sharply as thickness increases and approaches the resistivity of bulk gold as thickness of the film exceeds a critical value.

The conduction mechanism in conducting polymers is reviewed and experimental results of temperature dependence of electrical conductivity of PF6 doped polypyrrole in temperature range of 77 to 300 K are discussed. The room-temperature conductivitywas experimentally determined to be 73 ± 3.4 S/m and temperature dependence follows the Mott’s variable range hopping model. The average hopping distance at 298 K was (6.75 ± 0.97) ×10-8 cm. The coefficient of decay of the localized states, the density states at the Fermi level, and the hopping activation energy were calculated to be (3.5±0.51) ×107 cm-1, (1.92 ± 0.83) ×1022 cm-3 eV-1, and 0.040 ± 0.001 eV respectively. KEYWORDS: Electrically Conducting Polymers; Doped Polypyrrole; Temperature Dependence of Conductivity; Hopping Activation Energy; Density of State at Fermi level

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The band gap energy Eg in silicon was found by exploiting the linear relationship between the temperature and voltage for the constant current in the temperature range of 275 K to 333 K. Within the precision of our experiment, the results obtained are in good agreement with the known value energy gap in silicon. The temperature dependence of Eg for silicon has also been studied.