A multi-wavelength Quantum well (QW) waveguide photodiode (PD) have been designed for Coarse Wavelength Division Multiplexing (CWDM) systems in which spatial tailoring of the bandgap with post growth F implanted QW intermixing of InGaAsP/InP multi QWs for the integration have been considered. Two separate structures with different composition but same well widths are necessary to detect all CWDM wavelengths. For In 0.5995 Ga 0.4005 As 0.8521 P 0.1479 well there is a 12 channel coverage from 1,270 to 1,490 nm and for the In 0.5540 Ga 0.4460 As 0.9489 P 0.0511 well the 14 channel spans from 1,350 to 1,610 nm. A carrier tunneling time of 20 ps along with the transit time limited bandwidth of 86 GHz gives a 3 dB bandwidth of 41 GHz by optimizing the i-MQW thickness and dopant concentration of the different layers of the waveguide. A maximum efficiency of 22% with insertion loss of 0.4-23 dB has been obtained.

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InGaAsP/InP Multi Quantum Well (MQW) based rib waveguide (WG) multi-wavelength PIN type photodiodes (PD) have been designed for Coarse Wavelength Division Multiplexing (CWDM) systems in which spatial bandgap tailoring have been accomplished by using post growth Fluorine (F) implanted QW Intermixing (QWI) as the integration mechanism. Two separate structures with different composition but same well widths are necessary to detect all CWDM wavelengths in which a In 0.5540 Ga 0.4460 As 0.9489 P 0.0511 /InP (15nm/15nm) MQW structure has a 14 channel coverage which spans from 1350-1610nm. The thicknesses of the i-MQW layer and different layers constituting the WG have been optimized to give a maximum efficiency of 22%. A carrier tunneling time of 20ps along with the transit time limited bandwidth of 86GHz gives a 3dB bandwidth of 43GHz by optimizing the i-MQW thickness and dopant concentration of the different layers of the waveguide. For all 18 channels insertion loss of 0.4-23dB has been obtained for a detection sensitivity of 21dB. Design issues related to the contact formation for extracting the photo-generated microwave power in such photodiodes have been presented along with few fabrication details of the integration process.

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