An approach of creating CMOS channel with GeSn is one of the post-scaling techniques and is widely considered to be promising to improve LSI performance. In this paper, we selected the metal-organic (MO) precursors to deposit GeSn and investigated their characteristics. We confirmed that it is possible to deposit GeSn on a substrate using the MOCVD technique.

This paper describes stoichiometric Ge2Sb2Te5 (GST) film fabrication by the process based on chemical vapor deposition (CVD). GST films were fabricated by tellurization after GeSb CVD. This two step process enabled to fill high aspect holes. By applying appropriate precursors and process temperature, the surface morphology of the GST film was significantly improved. The moderate tellurization reaction process might contribute GST formation with maintaining the amorphous structure of the CVD GeSb. We believe this technique is useful for phase change memory application.

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