Terence Kane scite author profile

Through-Co self-forming-barrier (tCoSFB) metallization scheme is introduced, with Cu gap-fill capability down to 7 nm-node dimensions. Mn atoms from doped-seedlayer diffuse through CVD-Co wetting layer, to form TaMn x O y barrier, with integrity proven by vertical-trench triangular-voltage-sweep and barrier-oxidation tests. tCoSFB scheme enables 32% and 45% lower line and via resistance, respectively at 10 nm node dimensions, while achieving superior EM performance to competitive TaN/Co and TaN/Ru-based barriers.

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Investigation of emerging middle-of-line poly gate-to-diffusion contact reliability issues

Chen

Mittl

Shinosky

et al. 2012

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Terence Kane

Electromigration-resistance enhancement with CoWP or CuMn for advanced Cu interconnects

Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node

Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires

Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes

Investigation of emerging middle-of-line poly gate-to-diffusion contact reliability issues

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