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Dielectric measurements have been made on tantalum which has been anodically oxidized in aqueous phosphoric acid of various concentrations and then heated in air. The resulting dielectric consists of a highly conducting portion adjacent to the tantalum and an outer, nonconducting portion. This structure is interpreted in terms of the distribution of phosphorus incorporated into the oxide and its effect on the diffusion of oxygen during heat‐treatment.

126. While the topics of energetics have received increasing attention in the general chemistry curriculum in recent years, textbooks do not provide students with comprehensive definitions of heat.

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The temperature dependence of capacitance for heat-treated, anodized tantalum has been used as a means of scanning the conductivity profile across the Ta20~ film. This conductivity results from the extraction of oxygen from the oxide by the metal during heat-treatment. The results show that subsequent reanodization at the formation voltage is a slow process which proceeds in a stepwise manner from the electrolyte side of the oxide film toward the underlying tantalum. The application of a small anodic d-c bias gives a temporary conductivity profile which is similar to the permanent profile obtained by partial reanodization. Further evidence is given that the oxide conductivity is highest at the Ta-Ta205 interface.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-03-15 to IP