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There is a very narrow two-phase region in the CdS-CdTe pseudobinary system in high temperature, and we can obtain mixed crystals in almost the entire range of composition. Lattice parameters of CdSxTe1-x satisfy “Vegard's law”. Both of the solidus and the liquidus curves determined by D.T.A. have the same minimum temperature of 1071°C at x=0.2. At 1000°C the crystal structure is the cubic zincblende (x<0.2) and the hexagonal wurtzite (x>0.2). In the solid phase there is a miscibility gap, and it is attributed to lattice strain resulting from the large difference in atomic sizes of the VIth elements. On account of the strain energy contributions to the thermodynamic free energy the solidus curve is calculated from the experimental liquidus curve, and it agrees very well with the experimental data.

A single crystal of β‐normalSiC was grown by chemical vapor deposition using an SiH4‐C3H8‐H2 system on a silicon substrate with a sputtered layer. The grown layer of 4 μm thickness was confirmed as a single crystal by examination with reflection electron diffraction and x‐ray diffraction. To reduce the large mismatch between β‐normalSiC and a silicon substrate, a sputtered β‐normalSiC layer was employed as a buffer layer. Even though the sputtered layer was polycrystalline, the subsequent layer deposited by CVD was a single crystal. The crystallinity of the deposited layer was strongly affected by the thickness of the sputtered layer, the substrate temperature during sputtering, and the temperature of chemical vapor deposition.