A bulk heterojunction of ordered titania nanopillars and PbS colloidal quantum dots is developed. By using a pre-patterned template, an ordered titania nanopillar matrix with nearest neighbours 275 nm apart and height of 300 nm is fabricated and subsequently filled in with PbS colloidal quantum dots to form an ordered depleted bulk heterojunction exhibiting power conversion efficiency of 5.6%.

We have carried out a detailed study on the vapour-liquid-solid growth of silicon nanowires (SiNWs) on (111)-oriented Si substrates using Au as catalytic seed material. Arrays of individual seeds were patterned by electron-beam lithography, followed by Au evaporation and lift-off. SiNWs were grown using diluted silane as precursor gas in a low-pressure chemical vapor deposition system. The silane partial pressure, substrate temperature, and seed diameter were systematically varied to obtain the growth rate of the NWs and the rate of sidewall deposition. Activation energies of 19kcal∕mol for the axial SiNW growth and 29kcal∕mol for the radial deposition on the SiNW surface are derived from the data. SiNW growth at elevated temperatures is accompanied by significant Au surface diffusion, leading to a loss of Au from the tips of the SiNWs that depends on the layout and density of the Au seeds patterned. In contrast to NWs grown from a thin-film-nucleated substrate, the deterministic patterning of identical Au seeds of varying diameters allows accurate measurements of the nucleation yield of the SiNW, which is close to 100%, and analysis of the epitaxial relationship with the substrate. In addition to the vertical and the three 70.5°-inclined ⟨111⟩ epitaxial growth directions, we observe three additional 70.5°-inclined directions, which are rotated by 60°. The 60° rotation is explained by the occurrence of stacking faults in the SiNWs. The overall yield of vertically grown ⟨111⟩ NWs depends sensitively on the partial pressure of the silane and, to a lesser extent, on the growth temperature. At 80mTorr partial pressure and 470°C, up to 60% of the SiNWs grow in the vertical ⟨111⟩ direction. In situ doping of SiNWs using arsine resulted in a significant reduction of nucleation and wire growth, whereas doping with trimethylboron and phosphine exhibited no difference in growth and epitaxy compared with undoped samples.

A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 +/- 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal.

A self-assembled magnetic recording medium was created using colloidal ferrimagnetic building blocks. Monodisperse cobalt ferrite nanoparticles (CoFe(2)O(4)) were synthesized using solution-based methods and then stabilized in solution using the amphiphilic diblock copolymer, poly(acrylic acid)-b-poly(styrene) (PAA-PS). The acid groups of the acrylate block bound the polymer to the nanoparticle surface via multivalent interactions, while the styrene block afforded the magnetic nanoparticle--polymer complex solubility in organic solvents. Moreover, the diblock copolymer improved the colloidal stability of the ferrimagnetic CoFe(2)O(4) nanoparticles by reducing the strong interparticle magnetic interactions, which typically caused the ferrimagnetic nanoparticles to irreversibly aggregate. The nanoparticle--polymer complex was spin-coated onto a silicon substrate to afford self-organized thin film arrays, with the interparticle spacing determined by the molecular weight of the diblock copolymer. The thin film composite was also exposed to an external magnetic field while simultaneously heated above the glass transition temperature of poly(styrene) to allow the nanoparticles to physically rotate to align their easy axes with the direction of the magnetic field. In order to demonstrate that this self-assembled ferrimagnet--polymer composite was suitable as a magnetic recording media, read/write cycles were demonstrated using a contact magnetic tester. This work provides a simple route to synthesizing stabilized ferrimagnetic nanocrystals that are suitable for developing magnetic recording media.

We have used time-resolved x-ray diffraction to study the amorphous-crystalline phase transition in 20–80nm particles of the phase change materials Ge2Sb2Te5, nitrogen-doped Ge2Sb2Te5, Ge15Sb85, Sb2Te, and Sb2Te doped with Ag and In. We find that all samples undergo the phase transition with crystallization temperatures close to those of similarly prepared blanket films of the same materials with the exception of Sb2Te that shows the transition at a temperature that is about 40°C higher than that of blanket films. Some of the nanoparticles show a difference in crystallographic texture compared to thick films. Large area arrays of these nanoparticles were fabricated using electron-beam lithography, keeping the sample temperatures well below the crystallization temperatures so as to produce particles that were entirely in the amorphous phase. The observation that particles with diameters as small as 20nm can still undergo this phase transition indicates that phase change solid-state memory technology should scale to these dimensions.