Extension of nuclear magnetic resonance (NMR) to nanoscale samples has been a longstanding challenge because of the insensitivity of conventional detection methods. We demonstrated the use of an individual, near-surface nitrogen-vacancy (NV) center in diamond as a sensor to detect proton NMR in an organic sample located external to the diamond. Using a combination of electron spin echoes and proton spin manipulation, we showed that the NV center senses the nanotesla field fluctuations from the protons, enabling both time-domain and spectroscopic NMR measurements on the nanometer scale.
We have combined ultrasensitive magnetic resonance force microscopy (MRFM) with 3D image reconstruction to achieve magnetic resonance imaging (MRI) with resolution <10 nm. The image reconstruction converts measured magnetic force data into a 3D map of nuclear spin density, taking advantage of the unique characteristics of the "resonant slice" that is projected outward from a nanoscale magnetic tip. The basic principles are demonstrated by imaging the 1 H spin density within individual tobacco mosaic virus particles sitting on a nanometer-thick layer of adsorbed hydrocarbons. This result, which represents a 100 millionfold improvement in volume resolution over conventional MRI, demonstrates the potential of MRFM as a tool for 3D, elementally selective imaging on the nanometer scale.MRFM ͉ MRI ͉ nuclear magnetic resonance ͉ molecular structure imaging M agnetic resonance imaging (MRI) is well-known in medicine and in the neurosciences as a powerful tool for acquiring 3D morphological and functional information with resolution in the millimeter-to-submillimeter range (1, 2). Unfortunately, despite considerable effort, attempts to push the spatial resolution of conventional MRI into the realm of highresolution microscopy have been stymied by fundamental limitations, especially detection sensitivity (3, 4). Consequently, the highest resolution MRI microscopes today remain limited to voxel volumes Ͼ40 m 3 (5-8). The central issue is that MRI is based on the manipulation and detection of nuclear magnetism, and nuclear magnetism is a relatively weak physical effect. It appears that conventional coil-based inductive detection techniques simply cannot provide adequate signal-to-noise ratio for detecting voxel volumes below the micrometer size. This sensitivity constraint is unfortunate because MRI has much to offer the world of microscopy with its unique contrast modalities, its elemental selectivity, and its avoidance of radiation damage.Despite the many challenges, there is strong motivation to extend MRI to finer resolution, especially if the nanometer scale can be reached. At the nanometer scale, one might hope to directly and nondestructively image the 3D structure of individual macromolecules and molecular complexes (9). Such a powerful molecular imaging capability could be of particular interest to structural biologists trying to unravel the structure and interactions of proteins, especially for those proteins that cannot be crystallized for X-ray analysis, or are too large for conventional NMR spectroscopy. Nanoscale MRI, with its capacity for true 3D, subsurface imaging, its potential for generating contrast by selective isotopic labeling and its nondestructive nature, would be a welcome complement to the characteristics of electron microscopy. The key to pushing MRI to the nanoscale is detection sensitivity.Recently, a significant breakthrough in magnetic resonance detection sensitivity has been achieved by using magnetic resonance force microscopy (MRFM) (9-13), resulting in single spin detection for electrons ...
We have determined the dependence of the dissociative adsorption probability in the zero coverage limit, S0, for H2 on Cu(111) as a function of translational energy, Ei, and incidence angle, θi, vibrational state, v, and rotational state, J. We have also obtained information on the effect of surface temperature, Ts, on this probability. These results have been obtained by combining the findings of two separate experiments. We have obtained the form of the dependence of S0 on Ei at Ts=925 K for a range of quantum states from desorption experiments via the principle of detailed balance. We have obtained absolute S0 values from direct molecular beam adsorption experiments, which reveal that S0 scales with the so-called ‘‘normal energy,’’ En=Ei cos2 θi. The desorption experiments provide detailed information for J=0 to 10 of H2(v=0) and for J=0 to 7 of H2(v=1). The beam experiments additionally provide information on the adsorption of H2(v=2), averaged over J. All measurements are consistent with adsorption functions with an s-shaped form, which can be described by S0=A(1+erf(x))/2, where x=(En−E0)/W. Values of W are ∼0.16 and 0.13 eV for v=0 and v=1, respectively, at Ts=925 K, falling by about 0.05 eV for Ts=120 K, and with only a slight dependence on J. Values of A are insensitive to v and J, with a value of ∼0.25. S(En,v,J) curves are thus similar for different v and J, but shifted in En. In contrast, we find that the values of E0, which determine the mid-point of the curves, have a strong dependence on v and J. Specifically, E0 for H2(v=0) molecules is about 0.6 eV, falling to 0.3 and 0.1 eV for H2(v=1) and H2(v=2), respectively. Translational energy is thus about twice as effective as vibrational energy in promoting dissociation. E0 rises with increasing J at low J, before falling at high J, indicating that rotational motion hinders adsorption for low rotational states (J<4), and enhances adsorption for high rotational states (J≳4). Results are compared with similar studies on the D2/Cu(111) system and with recent calculations. Finally, these results are used to predict the dependence of the rate of dissociation on temperature for a ‘‘bulb’’ experiment with ambient hydrogen gas in contact with a Cu(111) surface. This simulation yields an activation energy of 0.47 eV for temperatures close to 800 K, compared to a literature value of 0.4 eV from experiment. Analysis of the temperature dependence reveals that the dominant reason for the increase in rate at high temperature is the increase in population of the high energy tail of the translational energy distribution.
Nonvolatile RAM using resistance contrast in phase-change materials [or phase-change RAM (PCRAM)] is a promising technology for future storage-class memory. However, such a technology can succeed only if it can scale smaller in size, given the increasingly tiny memory cells that are projected for future technology nodes (i.e., generations). We first discuss the critical aspects that may affect the scaling of PCRAM, including materials properties, power consumption during programming and read operations, thermal cross-talk between memory cells, and failure mechanisms. We then discuss experiments that directly address the scaling properties of the phase-change materials themselves, including studies of phase transitions in both nanoparticles and ultrathin films as a function of particle size and film thickness. This work in materials directly motivated the successful creation of a series of prototype PCRAM devices, which have been fabricated and tested at phase-change material cross-sections with extremely small dimensions as low as 3 nm • 20 nm. These device measurements provide a clear demonstration of the excellent scaling potential offered by this technology, and they are also consistent with the scaling behavior predicted by extensive device simulations. Finally, we discuss issues of device integration and cell design, manufacturability, and reliability.
The controlled motion of a series of domain walls along magnetic nanowires using spin-polarized current pulses is the essential ingredient of the proposed magnetic racetrack memory, a new class of potential non-volatile storage-class memories. Using permalloy nanowires, we achieved the successive creation, motion, and detection of domain walls by using sequences of properly timed, nanosecond-long, spin-polarized current pulses. The cycle time for the writing and shifting of the domain walls was a few tens of nanoseconds. Our results illustrate the basic concept of a magnetic shift register that relies on the phenomenon of spin-momentum transfer to move series of closely spaced domain walls.
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