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Structure and optical properties of a-plane ZnO/Zn0.9Mg0.1O multiple quantum wells grown on r-plane sapphire substrates by pulsed laser deposition Fabrication and photoluminescent characteristics of Zn O ∕ Mg 0.2 Zn 0.8 O coaxial nanorod single quantum well structures Appl. Temperature quenching of exciton luminescence intensity in ZnO/(Mg,Zn)O multiple quantum wells J. Appl. Phys. 93, 5929 (2003); 10.1063/1.1563295 Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg,Zn)O multiple quantum wells

Gallium and nitrogen ions have been implanted into ZnO crystals and metal organic vapor phase epitaxy grown ZnO layers. Postimplantation annealing behavior in the temperature range between 200 and 900 °C has been studied by means of Raman scattering and low-temperature photoluminescence. The temperature for healing of the implantation-induced defects was found to be 800 °C. Implanted gallium acts as donor with a donor binding energy ED of 53 meV, thus allowing the control of n-type doping in ZnO. From photoluminescence measurements of the donor-acceptor pair transition of a series of nitrogen-implanted ZnO samples we estimate the binding energy EA of the nitrogen acceptor between 163 and 196 meV. Electrical characterization of nitrogen-implanted samples shows a behavior ranging from low n-type to highly compensated. But no unambiguous and reproducible type conversion could be achieved.

Heating of the spin system of magnetic Mn ions by means of photoexcited carriers has been studied in undoped ͑Zn, Mn͒Se/͑Zn, Be͒Se multiple quantum well structures. Elevated spin temperature of the magnetic ions has been documented by a suppression of the giant Zeeman splitting of excitonic states measured in photoluminescence and reflectivity spectra. Low densities of photoexcitation ͑about 1 W/cm 2 ͒ induce strong heating of the Mn spin system. The heating shows a strong dependence on the Mn content varying from 0.004 to 0.06. It decreases with increasing Mn content due to the shortening of the spin-lattice relaxation time.

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